| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IVA-05228 |
Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Option
|
Agilent (Hewlett-Packard)
|
| IAM-82028 |
Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| IAM-82008 IAM-82008-STR IAM-82008-TR1 IAM-82008- I |
Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| UPC2714T-E3 UPC2715T UPC2714T |
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.8 GHz的低功耗宽带放大器硅双极单片集成电
LOW POWER CONSUMPTION SILICON MMIC AMPLIFIER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MSA-0800 MSA-0800-GP4 |
Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| MSA-0711 MSA-0711-BLK MSA-0711-TR1 |
Cascadable Silicon Bipolar MMIC Amplifier
|
http://
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| MSA-0785 |
Cascadable Silicon Bipolar MMIC Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
